TGA1141-EPU データシートの表示（PDF） - TriQuint Semiconductor
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TGA1141-EPU Datasheet PDF : 9 Pages
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Advance Product Information
August 27, 2003
33-36 GHz 2W Power Amplifier
TGA1141-EPU
Key Features
• 0.25 um pHEMT Technology
• 17 dB Nominal Gain
• 31 dBm Pout @ P1dB,
• Psat 33dBm @ 6V , 34dBm @7V
• Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A
at Psat
• Chip Dimensions 4.13 x 3.30 x 0.1 mm
Bias Conditions: Vd = 6 V, Id = 880 mA
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Frequency (GHz)
Primary Applications
• Military Radar Systems
• Ka Band Sat-Com
• Point-to-Point Radio
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P1dB_ave
Psat_ave
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Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
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TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com
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