STS4DNFS30 データシートの表示（PDF） - STMicroelectronics

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STS4DNFS30

N-channel - 30V - 0.044Ω - 4.5A SO-8 STripFET™ Power MOSFET plus schottky rectifier

STMicroelectronics 

STS4DNFS30

Electrical characteristics

Table 7.

Symbol

Switching times

Parameter

td(on)

tr

Turn-on delay time

Rise time

td(off)

tf

Turn-off delay time

Fall time

Test Conditions

VDD = 15V, ID = 2A,

RG = 4.7Ω, VGS = 5V

(see Figure 12)

VDD = 15V, ID = 2A,

RG = 4.7Ω, VGS = 5V

(see Figure 12)

Min. Typ. Max Unit

9

ns

17

ns

15

ns

6

ns

Table 8. Source drain diode

Symbol

Parameter

Test Conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 4.5A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4.5A, di/dt = 100A/µs

VDD = 15V, Tj = 150°C

(see Figure 17)

1. Pulse width limited by safe operating area

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min. Typ. Max. Unit

4.5 A

13 A

1.2 V

22

ns

14.3

nC

1.3

A

5/12

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