STS4DNFS30 データシートの表示（PDF） - STMicroelectronics
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STS4DNFS30
STMicroelectronics
STS4DNFS30 Datasheet PDF : 12 Pages
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STS4DNFS30
1
Electrical ratings
Table 1. Mosfet absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25°C
ID Drain current (continuous) at TC = 100°C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
1. Pulse width limited by safe operating area
Table 2.
Symbol
Schottky absolute maximum ratings
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV) Average forward current
TL=125°C
δ=0.5
tp=10ms
IFSM Surge non repetitive forward current Sinusoidal
IRRM Repetitive peak reverse current
tp=2µs
F=1kHz
IRSM Non repetitive peak reverse current tp=100µs
dv/dt Critical rate of rise of reverse voltage
Table 3. Thermal data
Symbol
Parameter
Rthj-amb Thermal resistance junction-amb Mosfet (1)
Tstg Storage temperature range Max
Tj Junction temperature
1. Mounted on FR-4 board (steady state)
Electrical ratings
Value
Unit
30
V
± 20
V
4.5
A
3.2
A
13
A
2
W
Value
30
10
4
75
1
1
10000
Value
62.5
-55 to 150
-55 to 150
Unit
V
A
A
A
A
A
v/µs
Unit
°C/W
°C
°C
3/12
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