STS4DNFS30 データシートの表示（PDF） - STMicroelectronics

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STS4DNFS30

N-channel - 30V - 0.044Ω - 4.5A SO-8 STripFET™ Power MOSFET plus schottky rectifier

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STS4DNFS30

(Tcase =25°C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source

breakdown voltage

ID = 250µA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = Max rating

drain current (VGS = 0) VDS = Max rating, TC=125°C

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

Gate threshold voltage VDS = VGS, ID = 250µA

Static drain-source on VGS = 10V, ID = 2A

resistance

VGS = 5V, ID = 2A

Min. Typ. Max. Unit

30

V

1 µA

10 µA

± 100 nA

1

V

0.044 0.055 Ω

0.085 Ω

Table 5.

Symbol

Static

Parameter

Test conditions

Min. Typ. Max. Unit

IR (1)

Reverse leakage

current

Tj = 25°C

Tj = 100°C

VR = VRRM

200 µA

6

15 mA

VF (1)

Zero gate voltage

Tj = 25°C

Tj = 125°C

drain current (VGS = 0) Tj = 25°C

Tj = 125°C

IF = 2A

IF = 4A

0.45 V

0.325 0.375 V

0.53 V

0.43 0.51 V

1. Pulse test: tp=380µs, δ < 2%. To evaluate the conduction losses use the following equation:

P = 0.24 × IF(AV) + 0.068IF2(RMS)

Table 6.

Symbol

Dynamic

Parameter

gfs

Ciss

Coss

Crss

Qg

Qgs

Qgd

Forward

transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

Total gate charge

Gate-source charge

Gate-drain charge

Test conditions

VDS =10V, ID =2A

Min.

VDS = 25 V, f = 1 MHz, VGS = 0

VDD = 15V, ID = 4.5A,

VGS = 5V

(see Figure 13)

Typ. Max. Unit

5

S

330

pF

115

pF

28

pF

4.7

nC

1.2

nC

2.1

nC

4/12

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