STP21NM60ND データシートの表示（PDF） - STMicroelectronics

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STP21NM60ND

N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

STMicroelectronics 

STP/F21NM60ND - STB21NM60ND - STI21NM60ND - STW21NM60ND

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM (2)

PTOT

dv/dt(3)

Drain-source voltage (VGS = 0)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

Insulation withstand voltage (RMS) from

Viso all three leads to external heat sink

(t=1 s;TC=25 °C)

Tstg

Storage temperature

TJ

Max. operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 17 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS

Value

TO-220/D2PAK

I2PAK / TO-247

TO-220FP

600

±25

17

10

68

140

40

17(1)

10(1)

68(1)

30

--

2500

–55 to 150

150

Unit

V

V

A

A

A

W

V/ns

V

°C

Table 3. Thermal data

Symbol

Parameter

TO-220 D²PAK I²PAK TO-247 TO-220FP Unit

Rthj-case

Thermal resistance junction-

case max

0.89

4.17 °C/W

Rthj-amb

Thermal resistance junction-

ambient max

62.5

-- 62.5 50

62.5 °C/W

Tl

Maximum lead temperature for

soldering purpose

300

°C

Table 4. Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

8.5

A

Single pulse avalanche energy

EAS

(starting TJ = 25 °C, ID = IAS, VDD = 50 V)

610

mJ

3/18

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