STP21NM60ND データシートの表示（PDF） - STMicroelectronics

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STP21NM60ND

N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

STMicroelectronics 

STP/F21NM60ND-STW21NM60ND

STB21NM60ND-STI21NM60ND

N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET

D2PAK, I2PAK, TO-220FP, TO-220, TO-247

Features

Type

STB21NM60ND

STI21NM60ND

STF21NM60ND

STP21NM60ND

STW21NM60ND

VDSS @

TJmax

650 V

650 V

650 V

650 V

650 V

RDS(on)

max

< 0.22 Ω

< 0.22 Ω

< 0.22 Ω

< 0.22 Ω

< 0.22 Ω

ID

17 A

17 A

17 A(1)

17 A

17 A

1. Limited only by maximum temperature allowed

■ The worldwide best RDS(on)*area amongst the

fast recovery diode devices

■ 100% avalanche tested

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Extremely high dv/dt and avalanche

capabilities

3

2

1

TO-220

3

2

1

TO-220FP

3

1

D2PAK

123

I2PAK

3

2

1

TO-247

Figure 1. Internal schematic diagram

Application

■ Switching applications

Description

The FDmesh™ II series belongs to the second

generation of MDmesh™ technology. This

revolutionary Power MOSFET associates a new

vertical structure to the company's strip layout

and associates all advantages of reduced on-

resistance and fast switching with an intrinsic fast-

recovery body diode. It is therefore strongly

recommended for bridge topologies, in ZVS

phase-shift converters.

Table 1. Device summary

Order codes

Marking

STB21NM60ND

21NM60ND

STI21NM60ND

21NM60ND

STF21NM60ND

STP21NM60ND

21NM60ND

21NM60ND

STW21NM60ND

21NM60ND

March 2009

Rev 3

Package

D²PAK

I²PAK

TO-220FP

TO-220

TO-247

Packaging

Tape and reel

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