ST1S06APM データシートの表示（PDF） - STMicroelectronics

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ST1S06APM

Synchronous rectification with inhibit, 1.5A, 1.5 MHz fixed or adjustable, step-down switching regulator in DFN6 3x3

STMicroelectronics 

Electrical characteristics

ST1S06

Table 6. Electrical characteristics for ST1S06PM33

(VIN_SW =VIN_A =VINH =5V, VO=3.3V, CI =4.7µF, CO =22µF, L1 =3.3µH, TJ =-30 to 125°C unless

otherwise specified. Typical values are referred to TJ =25°C)

Symbol

OUT

IO

VI

Parameter

Output feedback pin

IO Pin bias current

Minimum input voltage

IQ

Quiescent current

IO

Output current

VINH Inhibit threshold

IINH Inhibit pin current

%VO/∆VI Reference line regulation

Test conditions

VO = 3.5V

IO= 10mA to 1.5A

VINH > 1.2V

VINH < 0.4V, TJ = -30°C to 85°C

VI = 4.2 to 5.5V Note: 1

Device ON, VI = 4.2 to 5.5V

Device ON, VI = 4.2 to 5V

Device OFF

Min.

3.23

4.2

1.5

1.3

1.2

VI = 4.2V to 5.5V Note: 1

%VO/∆IO Reference load regulation

IO = 10mA to 1.5A Note: 1

PWMfS PWM Switching frequency

VFB = 0.8V

1.2

DMAX Maximum duty cycle

80

RDSON-N NMOS Switch on resistance

ISW = 750 mA

RDSON-P PMOS Switch on resistance

ISW = 750 mA

ISWL Switching current limitation

Note: 1

ν

Efficiency Note: 1

IO = 10mA to 100mA, VO = 3.3V 65

IO = 100mA to 1.5A, VO = 3.3V

85

TSHDN Thermal shutdown

130

THYS Thermal shutdown hysteresis

%VO/∆IO Load transient response

IO = 100mA to 750mA, TJ = 25°C

tR = tF ≥ 200ns, Note: 1

-5

%VO/∆IO Short circuit removal response

IO = 10mA to IO=short, TJ = 25°C

Note: 1

-10

Note: 1 Guaranteed by design, but not tested in production

Typ. Max. Unit

3.3 3.37 V

15

20 µA

V

1.5 mA

1

µA

A

V

0.4

2

µA

0.2

0.3

%VO/

∆VI

0.2

0.3

%VO/

∆IO

1.5

1.8 MHz

87

%

0.12

Ω

0.15

Ω

2.3

A

%

90

150

°C

15

°C

+5 %VO

+10 %VO

8/19

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