ST1S06APM データシートの表示（PDF） - STMicroelectronics

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ST1S06APM

Synchronous rectification with inhibit, 1.5A, 1.5 MHz fixed or adjustable, step-down switching regulator in DFN6 3x3

STMicroelectronics 

ST1S06

Electrical characteristics

Table 5. Electrical characteristics for ST1S06PM12

(VIN_SW =VIN_A =VINH =5V, VO=1.2V, CI =4.7µF, CO =22µF, L1 =3.3µH, TJ =-30 to 125°C unless

otherwise specified. Typical values are referred to TJ =25°C)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

OUT Output feedback pin

1.176 1.2 1.224 V

IO

IO Pin bias current

VO = 1.5V

15

20 µA

VI

Minimum input voltage

IO= 10mA to 1.5A

2.7

V

IQ

Quiescent current

VINH > 1.2V

VINH < 0.4V, TJ = -30°C to 85°C

1.5 mA

1

µA

IO

Output current

VI = 2.7 to 5.5V Note: 1

1.5

A

Device ON, VI = 2.7 to 5.5V

1.3

VINH Inhibit threshold

Device ON, VI = 2.7 to 5V

1.2

V

Device OFF

0.4

IINH Inhibit pin current

2

µA

%VO/∆VI Reference line regulation

VI = 2.7V to 5.5V Note: 1

0.2

0.3

%VO/

∆VI

%VO/∆IO Reference load regulation

IO = 10mA to 1.5A Note: 1

0.2

0.3

%VO/

∆IO

PWMfS PWM Switching frequency

VFB = 0.8V

1.2

1.5

1.8 MHz

DMAX Maximum duty cycle

80

87

%

RDSON-N NMOS Switch on resistance

ISW = 750 mA

0.12

Ω

RDSON-P PMOS Switch on resistance

ISW = 750 mA

0.15

Ω

ISWL Switching current limitation

Note: 1

2.3

A

ν

Efficiency Note: 1

IO = 10mA to 100mA, VO = 1.2V 60

%

IO = 100mA to 1.5A, VO = 1.2V

80

85

TSHDN Thermal shutdown

130 150

°C

THYS Thermal shutdown hysteresis

15

°C

%VO/∆IO Load transient response

IO = 100mA to 750mA, TJ = 25°C

tR = tF ≥ 200ns, Note: 1

-5

+5 %VO

%VO/∆IO Short circuit removal response

IO = 10mA to IO=short, TJ = 25°C

Note: 1

-10

+10 %VO

Note: 1 Guaranteed by design, but not tested in production

7/19

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