datasheetbank_Logo
データシート検索エンジンとフリーデータシート

ST1S06APM データシートの表示(PDF) - STMicroelectronics

部品番号
コンポーネント説明
一致するリスト
ST1S06APM Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
4 Electrical characteristics
ST1S06
Table 4. Electrical characteristics for ST1S06
(VIN_SW =VIN_A =VINH =5V, VO=1.2V, CI =4.7µF, CO =22µF, L1 =3.3µH, TJ =-30 to 125°C
(unless otherwise specified. Typical values are referred to TJ = 25°C)
Symbol
FB
IFB
VI
Parameter
Feedback voltage
VFB pin bias current
Minimum input voltage
IQ
Quiescent current
IO
Output current
VINH Inhibit threshold
IINH Inhibit pin current
%VO/VI Reference line regulation
Test conditions
Min.
784
IO= 10mA to 1.5A
2.7
VINH > 1.2V
VINH < 0.4V, TJ = -30°C to 85°C
VI = 2.7 to 5.5V Note: 1
1.5
Device ON, VI = 2.7 to 5.5V
1.3
Device ON, VI = 2.7 to 5V
1.2
Device OFF
VI = 2.7V to 5.5V Note: 1
%VO/IO Reference load regulation
IO = 10mA to 1.5A Note: 1
PWMfS PWM Switching frequency
VFB = 0.8V
1.2
DMAX Maximum duty cycle
80
RDSON-N NMOS Switch on resistance
ISW = 750 mA
RDSON-P PMOS Switch on resistance
ISW = 750 mA
ISWL Switching current limitation
Note: 1
ν
Efficiency Note: 1
IO = 10mA to 100mA, VO = 3.3V 65
IO = 100mA to 1.5A, VO = 3.3V
85
TSHDN Thermal shutdown
130
THYS Thermal shutdown hysteresis
%VO/IO Load transient response
IO = 100mA to 750mA, TJ = 25°C
tR = tF 200ns, Note: 1
-5
%VO/IO Short circuit removal response
IO = 10mA to IO=short, TJ = 25°C
Note: 1
-10
Note: 1 Guaranteed by design, but not tested in production
Typ. Max. Unit
800 816 mV
600 nA
V
1.5 mA
1
µA
A
V
0.4
2
µA
0.2
0.3
%VO/
VI
0.2
0.3
%VO/
IO
1.5
1.8 MHz
87
%
0.12
0.15
2.3
A
%
90
150
°C
15
°C
+5 %VO
+10 %VO
6/19

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]