MKP1V120(2012) データシートの表示（PDF） - ON Semiconductor
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MKP1V120 Datasheet PDF : 5 Pages
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MKP1V120 Series
THERMAL CHARACTERISTICS
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1 0.2
ZqJL(t) = RqJL • r(t)
DTJL = Ppk RqJL[r(t)]
where:
tp
TIME
DTJL = the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(tp) = normalized value of transient resistance at time tp.
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady-state conditions are achieved.
Using the measured value of TL, the junction
temperature may be determined by:
TJ = TL + DTJL
0.5 1.0 2.0
5.0 10
20
50 100 200
500 1.0 k 2.0 k
5.0 k 10 k
t, TIME (ms)
Figure 5. Thermal Response
1.4
1.0
1.2
1.0
0.9
0.8
0.6
0.8
-60 -40 -20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Voltage
0.4
-60 -40 -20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current
100
10
IPK
10%
tw
1.0
0.1
1.0
10
100
tw, PULSE WIDTH (ms)
Figure 8. Pulse Rating Curve
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