MKP1V120(2012) データシートの表示（PDF） - ON Semiconductor
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MKP1V120 Datasheet PDF : 5 Pages
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MKP1V120 Series
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
Symbol
IDRM
VDRM
VBO
IBO
IH
VTM
ITM
Parameter
Off State Leakage Current
Off State Repetitive Blocking Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
Peak on State Current
ITM
IH
VTM
Slope = RS
IS
IDRM VS
I(BO)
+ Voltage
VDRM
V(BO)
RS
+
(V(BO) – VS)
(IS – I(BO))
140
130
TL
120
3/8″
3/8″
110
100
TJ = 125°C
Sine Wave
90
Conduction Angle = 180°C
80
70
60
50
40
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
IT(RMS), ON-STATE CURRENT (AMPS)
Figure 1. Maximum Lead Temperature
1.0
TJ = 125°C
Sine Wave
0.8
Conduction Angle = 180°C
Assembled in PCB
0.6
Lead Length = 3/8″
0.4
0.2
0
20
40
60
80
100 120 140
TA, MAXIMUM AMBIENT TEMPERATURE (°C)
Figure 2. Maximum Ambient Temperature
10
7.0
5.0
3.0
2.0
TJ = 25°C
125°C
1.0
0.7
0.5
0.3
0.2
0.1
0
1.0
2.0
3.0
4.0
5.0
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. Typical On−State Voltage
1.25
TJ = 25°C
1.00
Conduction Angle = 180°C
0.75
0.50
0.25
0
0.2
0.4
0.6
0.8
1.0
IT(RMS), ON-STATE CURRENT (AMPS)
Figure 4. Typical Power Dissipation
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