AD7776AN データシートの表示（PDF） - Analog Devices

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AD7776AN

LC2MOS, High Speed 1-, 4-, & 8-Channel 10-Bit ADCs

Analog Devices 

AD7776/AD7777/AD7778–SPECIFICATIONS (VCC = +5 V ؎ 5%; AGND = DGND = O V;

CLKIN = 8 MHz; RTN = O V; CREFIN = 10 nF; all specifications TMIN to TMAX unless otherwise noted.)

Parameter

A Versions1

Units

Conditions/Comments

DC ACCURACY

Resolution2

10

Relative Accuracy

±1

Differential Nonlinearity

±1

Bias Offset Error

± 12

Bias Offset Error Match

10

Plus or Minus Full-Scale Error

± 12

Plus or Minus Full-Scale Error Match 10

Bits

LSB max

LSB max

LSB max

LSB max

LSB max

LSB max

See Terminology

No Missing Codes; See Terminology

See Terminology

Between Channels, AD7777/AD7778 Only; See Terminology

See Terminology

Between Channels, AD7777/AD7778 Only; See Terminology

ANALOG INPUTS

Input Voltage Range

All Inputs

Input Current

REFERENCE INPUT

REFIN

REFIN Input Current

VBIAS ± VSWING

+200

1.9/2.1

+200

V min/V max

µA max

VIN = VBIAS ± VSWING; Any Channel

V min/V max For Specified Performance

µA max

REFERENCE OUTPUT

REFOUT

DC Output Impedance

Reference Load Change

Short Circuit Current3

1.9/2.1

5

±2

±5

20

V min/V max

Ω typ

mV max

mV max

mA max

Nominal REFOUT = 2.0 V

For Reference Load Current Change of 0 to ± 500 µA

For Reference Load Current Change of 0 to ± 1 mA

Reference Load Should Not Change During Conversion

See Terminology

LOGIC OUTPUTS

DB0–DB9, BUSY/INT

VOL, Output Low Voltage

VOH, Output High Voltage

Floating State Leakage Current

Floating State Capacitance3

ADC Output Coding

0.4

V max

4.0

V min

± 10

µA max

10

pF max

Twos Complement

ISINK = 1.6 mA

ISOURCE = 200 µA

LOGIC INPUTS

DB0–DB9, CS, WR, RD, CLKIN

Input Low Voltage, VINL

0.8

Input High Voltage, VINH

2.4

Input Leakage Current

10

Input Capacitance3

10

V max

V min

µA max

pF max

CONVERSION TIMING

Acquisition Time

Single Conversion

Double Conversion

tCLKIN

tCLKIN High

tCLKIN Low

POWER REQUIREMENTS

VCC Range

ICC, Normal Mode

ICC, Power-Down Mode

Power-Up Time to Operational

Specifications

4.5 tCLKIN

5.5 tCLKIN + 70

14 tCLKIN

28 tCLKIN

125/500

50

40

ns min

See Terminology

ns max

ns max

ns max

ns min/ns max Period of Input Clock CLKIN

ns min

Minimum High Time for CLKIN

ns min

Minimum Low Time for CLKIN

+4.75/+5.25

15

1.5

500

V min/V max For Specified Performance

mA max

CS = RD = +5 V, CR8 = 0

mA max

CR8 = 1. All Linear Circuitry OFF

µs max

From Power-Down Mode

DYNAMIC PERFORMANCE

Signal to Noise and Distortion

S/(N+D) Ratio

–57

Total Harmonic Distortion (THD) –60

Intermodulation Distortion (IMD) –75

Channel-to-Channel Isolation

–90

NOTES

1Temperature range as follows: A = –40°C to +85°C.

21 LSB = (2 × VSWING)/1024 = 1.95 mV for VSWING = 1.0 V.

3Guaranteed by design, not production tested.

Specifications subject to change without notice.

dB min

dB min

dB typ

dB typ

See Terminology

VIN = 99.88 kHz Full-Scale Sine Wave with fSAMPLING = 380.95 kHz

VIN = 99.88 kHz Full-Scale Sine Wave with fSAMPLING = 380.95 kHz

fa = 103.2 kHz, fb = 96.5 kHz with fSAMPLING = 380.95 kHz. Both

Signals Are Sine Waves at Half-Scale Amplitude

VIN = 100 kHz Full-Scale Sine Wave with fSAMPLING = 380.95 kHz

–2–

REV. 0

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