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P4C1024L データシートの表示(PDF) - Performance Semiconductor

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P4C1024L
Performance-Semiconductor
Performance Semiconductor Performance-Semiconductor
P4C1024L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
CAPACITANCES
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Symbol
Parameter
Test Conditions
Max
C
IN
Input Capacitance
VIN = 0V
7
COUT
Output Capacitance
VOUT = 0V
9
P4C1024L
Unit
pF
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
Temperature
*
**
Unit
Range
-55
-70
-55
-70
ICC
Dynamic Operating Current
Commercial
Industrial
70
85
70
85
15
25
15
25
mA
mA
*Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The
device
is
continuously
enabled
for
writing,
i.e.,
CE2
VIH
(min),
CE
1
and
WE
VIL
(max),
OE
is high.
Switching
inputs are 0V and 3V.
**As above but @ f=1 MHz and VIL/ VIH = 0V/ VCC.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
-55
-70
Symbol
Parameter
Min
Max
Min
Max
Unit
tRC Read Cycle Time
55
70
ns
tAA Address Access Time
55
70
ns
tAC Chip Enable Access
55
Time
70
ns
tOH Output Hold from
5
5
ns
Address Change
tLZ Chip Enable to
10
10
ns
Output in Low Z
tHZ Chip Disable to
20
Output in High Z
25
ns
tOE Output Enable Low
30
to Data Valid
35
ns
tOLZ Output Enable Low
5
5
ns
to Low Z
tOHZ Output Enable High
20
to High Z
25
ns
tPU
Chip Enable to
Power Up Time
0
0
ns
tPD Chip Disable to
55
Power Down Time
70
ns
153

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