M312L2920BG0-A2 データシートの表示（PDF） - Samsung
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M312L2920BG0-A2 Datasheet PDF : 18 Pages
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1GB, 2GB Registered DIMM
AC Timming Parameters & Specifications
Parameter
Sym-
bol
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay
Row precharge time
Row active to Row active
tRC
tRFC
tRAS
tRCD
tRP
tRRD
Write recovery time
Last data in to Read com-
mand
Col. address to Col. address
tWR
tWTR
tCCD
CL=2.0
Clock cycle time
tCK
CL=2.5
Clock high level width
tCH
Clock low level width
tCL
DQS-out access time from tDQSCK
Output data access time
tAC
Data strobe edge to ouput tDQSQ
Read Preamble
Read Postamble
CK to valid DQS-in
DQS-in setup time
tRPRE
tRPST
tDQSS
tWPRE
DQS-in hold time
tWPRE
DQS falling edge to CK ris- tDSS
DQS falling edge from CK
tDSH
DQS-in high level width
DQS-in low level width
DQS-in cycle time
Address and Control Input
tDQSH
tDQSL
tDSC
tIS
Address and Control Input
tIH
Address and Control Input
tIS
Address and Control Input
tIH
Data-out high impedence
time from CK/CK
Data-out low impedence
time from CK/CK
Input Slew Rate(for input
tHZ
tLZ
tSL(I)
Input Slew Rate(for I/O pins) tSL(IO)
B3
(DDR333@CL=2.5))
Min
Max
60
72
42
70K
18
18
12
15
1
1
7.5
12
6
12
0.45
0.55
0.45
0.55
-0.6
+0.6
-0.7
+0.7
-
0.4
0.9
1.1
0.4
0.6
0.75
1.25
0
0.25
0.2
0.2
0.35
0.35
0.9
1.1
0.75
0.75
0.8
0.8
+0.7
-0.7
+0.7
0.5
0.5
Output Slew Rate(x4,x8)
tSL(O)
1.0
4.5
Output Slew Rate Matching tSLMR
0.67
1.5
DDR SDRAM
A2
(DDR266@CL=2)
Min
Max
65
75
45
120K
20
20
15
15
1
1
7.5
7.5
0.45
0.45
-0.75
-0.75
-
0.9
0.4
0.75
0
0.25
0.2
0.2
0.35
0.35
0.9
0.9
0.9
1.0
1.0
12
12
0.55
0.55
+0.75
+0.75
0.5
1.1
0.6
1.25
1.1
+0.75
-0.75
0.5
0.5
1.0
0.67
+0.75
4.5
1.5
B0
(DDR266@CL=2.5)
Min
Max
65
75
45
120K
20
20
15
15
1
1
10
7.5
0.45
0.45
-0.75
-0.75
-
0.9
0.4
0.75
0
0.25
0.2
0.2
0.35
0.35
0.9
0.9
0.9
1.0
1.0
12
12
0.55
0.55
+0.75
+0.75
0.5
1.1
0.6
1.25
1.1
+0.75
-0.75
0.5
0.5
1.0
0.67
+0.75
4.5
1.5
Uni
t
Note
ns
ns
ns
ns
ns
ns
ns
tCK
tCK
ns
ns
tCK
tCK
ns
ns
ns 12
tCK
tCK
tCK
ns 3
tCK
tCK
tCK
tCK
tCK
tCK
ns i,5.7~
ns i,5.7~
ns i, 6~9
ns i, 6~9
ns 1
ns 1
V/
V/
ns
V/
Rev. 1.1 August. 2003
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