K4X56163PI-L(F)E/GC6 データシートの表示（PDF） - Samsung

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K4X56163PI-L(F)E/GC6

16Mx16 Mobile DDR SDRAM

Samsung 

K4X56163PI - L(F)E/G

Mobile DDR SDRAM

9.3. Internal Temperature Compensated Self Refresh (TCSR)

1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the self

refresh cycle automatically according to the two temperature ranges ; 45 °C and 85 °C.

2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.

Self Refresh Current (IDD6)

-E

-G

Temperature Range

Unit

Full Array 1/2 Array 1/4 Array Full Array 1/2 Array 1/4 Array

45 °C1)

85 °C

200

160

140

150

135

130

uA

450

300

250

300

250

225

NOTE :

1) It has +/- 5 °C tolerance.

9.4. Partial Array Self Refresh (PASR)

1. In order to save power consumption, Mobile DDR SDRAM includes PASR option.

2. Mobile DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.

Figure 4. EMRS code and TCSR , PASR

BA1=0 BA1=0

BA0=0 BA0=1

BA1=0 BA1=0

BA0=0 BA0=1

BA1=0 BA1=0

BA0=0 BA0=1

BA1=1 BA1=1

BA0=0 BA0=1

- Full Array

BA1=1 BA1=1

BA0=0 BA0=1

- 1/2 Array

BA1=1 BA1=1

BA0=0 BA0=1

- 1/4 Array

Partial Self Refresh Area

- 12 -

October 2007

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