K4X56163PI-L(F)E/GC6 データシートの表示（PDF） - Samsung
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K4X56163PI-L(F)E/GC6 Datasheet PDF : 20 Pages
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K4X56163PI - L(F)E/G
Mobile DDR SDRAM
10. Absolute maximum ratings
Parameter
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Voltage on VDDQ supply relative to VSS
Storage temperature
Power dissipation
Short circuit current
Symbol
VIN, VOUT
VDD
VDDQ
TSTG
PD
IOS
Value
-0.5 ~ 2.7
-0.5 ~ 2.7
-0.5 ~ 2.7
-55 ~ +150
1.0
50
NOTE :
1) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
2) Functional operation should be restricted to recommend operation condition.
3) Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
V
°C
W
mA
11. DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, Tc = -25°C to 85°C)
Parameter
Symbol
Min
Supply voltage(for device with a nominal VDD of 1.8V)
VDD
1.7
Max
Unit
1.95
V
I/O Supply voltage
Input logic high voltage
Input logic low voltage
VDDQ
VIH(DC)
VIL(DC)
1.7
1.95
V
0.7 x VDDQ VDDQ+0.3
V
-0.3
0.3 x VDDQ
V
Output logic high voltage
VOH(DC)
0.9 x VDDQ
-
V
Output logic low voltage
Input leakage current
Output leakage current
VOL(DC)
II
IOZ
-
0.1 x VDDQ
V
-2
2
uA
-5
5
uA
NOTE:
1) Under all conditions, VDDQ must be less than or equal to VDD.
2) These parameters should be tested at the pin on actual components and may be checked at either the pin or the pad in simulation.
Note
1
1
2
2
IOH = -0.1mA
IOL = 0.1mA
- 13 -
October 2007
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