IDT71V124S15 データシートの表示（PDF） - Integrated Device Technology

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IDT71V124S15

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

Integrated Device Technology 

IDT71V124, 3.3V CMOS Static RAM

1 Meg (128K x 8-Bit), Revolutionary Pinout

Commercial and Industrial Temperature Ranges

DC Electrical Characteristics(1)

(VDD = 3.3V ± 10%, VLC = 0.2V, VHC = VDD – 0.2V)

71V124S15

71V124S20

Symbol

Parameter

Com'l.

Ind.

Com'l.

Ind.

Unit

ICC

Dynamic Operating Current

CS < VIL, Outputs Open, VDD = Max., f = fMAX(2)

100

120

95

115

mA

ISB

Standby Power Supply Current (TTL Level)

CS > VIH, Outputs Open, VDD = Max., f = fMAX(2)

35

40

30

35

mA

Full Standby Power Supply Current (CMOS Level)

ISB1

CS > VHC, Outputs Open, VDD = Max., f = 0(2)

5

7

5

7

VIN < VLC or VIN > VHC

NOTES:

1. All values are maximum guaranteed values.

E 2. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.

IN NC A AC Test Conditions

T E S S Input Pulse Levels

R C 24 N Input Rise/Fall Times

Input Timing Reference Levels

A S 1 IG Output Reference Levels

P E 1V S AC Test Load

GND to 3.0V

3ns

1.5V

1.5V

See Figure 1 and 2

3484 tbl 07

BSORDLERN7EW DE DATAOUT

O OFOR 30pF

3.3V

298Ω

216Ω

DATAOUT

5pF*

3.3V

298Ω

216Ω

mA

3484 tbl 06

3484 drw 03

*Including jig and scope capacitance.

3484 drw 04

Figure 1. AC Test Load

Figure 2. AC Test Load

(for tCLZ, tOLZ, tCHZ, tOHZ, tOW, and tWHZ)

6.342

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