CY7C106BN データシートの表示（PDF） - Cypress Semiconductor
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CY7C106BN Datasheet PDF : 8 Pages
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CY7C106BN
CY7C1006BN
Data Retention Characteristics Over the Operating Range
Parameter
Description
Conditions[10]
VDR
ICCDR
tCDR[4]
tR[4]
VCC for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or
VIN < 0.3V
Data Retention Waveform
Min. Max. Unit
2.0
V
250
µA
0
ns
200
ms
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
4.5V
tCDR
tR
CE
Switching Waveforms
Read Cycle No.1[11, 12]
1
tRC
ADDRESS
tAA
tOHA
DATA OUT
PREVIOUS DATA VALID
Read Cycle No. 2 (OE Controlled)[12, 13]
ADDRESS
CE
OE
DATA OUT
VCC
SUPPLY
CURRENT
tRC
tACE
tDOE
tLZOE
HIGH IMPEDANCE
tLZCE
tPU
50%
Notes:
10. No input may exceed VCC +0.5V.
11. Device is continuously selected, OE and CE = VIL.
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
DATA VALID
DATA VALID
tHZOE
tHZCE
HIGH
IMPEDANCE
tPD
ICC
50%
ISB
Document #: 001-06429 Rev. **
Page 4 of 8
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