RMPA2451-58(2001) データシートの表示（PDF） - Raytheon Company
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RMPA2451-58 Datasheet PDF : 8 Pages
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Raytheon
Raytheon Commercial Electronics
RMPA2451-58
2.4 to 2.5 GHz GaAs MMIC Power Amplifier
Test Procedure for Evaluation Board RMPA2451-58-TB
(1) Turn the RF power OFF.
(2) Use the GND terminals of the evaluation board for the ground of the DC supplies.
(3) Apply a nominal voltage of approximately -0.5V to both Vgg1 and Vgg2 terminals.
(4) Apply a nominal voltage of +5.0V to the Vdd terminals. Adjust Vgg1 to give a first stage
quiescent Drain current, Id1 of 60mA. Adjust Vgg2 to provide a second stage quiescent Drain
current, Idd2, of 340 mA.
(5) Apply an RF signal within the ISM frequency range (2.4 - 2.5 GHz) at an initial input power
level of -10 dBm.
(6) To perform intermodulation product measurements, a second RF signal generator with a
frequency difference of 1 MHz is required, along with an appropriate power combiner. The test
configuration should allow this additional generator to provide the same input power level as
the first generator into the device. Intermodulation readings may then be made at the required
total output power levels.
(7) To operate at lower quiescent Drain currents, increase the magnitudes of Vgg1 and Vgg2 as
required, alternatively to operate at higher quiescent Drain currents, the magnitudes of Vgg1
and Vgg2 should be decreased accordingly.
(8) When turning the amplifier OFF, the power-up sequence should be reversed.
Figures 5 to 7 illustrate typical device performance. This data for various operating parameters was
obtained across the design bandwidth over a range of temperatures.
Figure 5 shows the variation in Gain and P1dB with temperature and operating frequency.
Figure 6 shows the 3rd-order intermodulation product measured at different total output power
levels.
Figure 7 demonstrates the device performance under a Wideband Code Division Multiple Access
(W-CDMA) modulation scheme, the conditions of which are specified.
Raytheon reserves the right to update or change specifications without notice.
Tel: 978-684-8663
Fax: 978-684-8646
www.raytheon.com/micro
Revised February 7, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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