RMPA2451-58(2001) データシートの表示（PDF） - Raytheon Company
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RMPA2451-58 Datasheet PDF : 8 Pages
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Raytheon
Raytheon Commercial Electronics
RMPA2451-58
2.4 to 2.5 GHz GaAs MMIC Power Amplifier
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The following describes the procedure for evaluating the RMPA2451-58, a partially-matched
Pseudomorphic High Electron Mobility (PHEMT) monolithic power amplifier which has been
designed for wireless applications in the 2.4 - 2.5 GHz ISM band, in a surface mount package.
Figure 1 illustrates the package outline, along with the pin designations, while Figure 2 provides a
functional block diagram of the packaged product.
It should be noted that the RMPA2451-58 requires the use of external passive components to form
the DC bias and RF output matching circuits. The schematic for a recommended circuits is shown
in Figure 3, along with a list of the appropriate components. Figure 4 illustrates the layout of an
evaluation board based on this schematic (RMPA2451-58-TB).
Figure 2: Functional Block Diagram (RMPA2451)
Pin #5
Vd1
Pins #4, #6, #7, #9, #12
Ground
Pin #8
RF INPUT
Pins #1, #2, #3
RF OUTPUT & Vd2
Package Underside
GROUND
Pin #10
Vg1
Pin #11
Vg2
Raytheon reserves the right to update or change specifications without notice.
Tel: 978-684-8663
Fax: 978-684-8646
www.raytheon.com/micro
Revised February 7, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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