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RMPA2451-58(2001) データシートの表示(PDF) - Raytheon Company

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RMPA2451-58
(Rev.:2001)
Raytheon
Raytheon Company Raytheon
RMPA2451-58 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Raytheon
Raytheon Commercial Electronics
RMPA2451-58
2.4 to 2.5 GHz GaAs MMIC Power Amplifier
Description
Raytheon RMPA2451-58 is a partially matched monolithic power amplifier in
a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz
ISM frequency band. The amplifier may be biased for linear, class AB or
class F for high efficiency applications. External matching components are
required to optimize the RF performance. The MMIC chip design utilizes
Raytheon’s 0.25 µm power PHEMT process.
Maximum
Ratings
Electrical
Characteristics
(Notes 3, 4.
At 25°C using
Raytheon Test
Boards)
Parameter
Positive Drain DC Voltage
Negative Gate DC Voltage
Simultaneous Drain to Gate Voltage
RF Input Power (from 50source)
Drain Current, First Stage
Drain Current, Second Stage
Gate Current
Channel Temperature
Operating Case Temperature
Storage Temperature Range
Thermal Resistance (Channel to Case)
Symbol
Vd1,Vd2
Vg1,Vg2
Vd-Vg
Pin
Id1
Id2
Ig
Tch
Tcase
Tstg
Rth
Value
+8
-5
+10
+10
75
525
5
175
-40 to 85
-40 to 125
33
Unit
Volts
Volts
Volts
dBm
mA
mA
mA
°C
°C
°C
°C/Watt
Parameter
Frequency Range
Gain (Note 1, 2, 3)
Output Power, P1dB (Note 1, 3)
Assoc. Power Added Efficiency
3rd order Intermod. Product (Note 4)
Drain Current (Id1), First Stage
Drain Current (Id2), Second Stage
Gate Current (Ig1 + Ig2)
Input Return Loss (50), (Note 2)
Min
2400
28.5
27
7.5
Typ
2450
33
28.5
33
-30
Max
2500
-27
75
525
5
Unit
MHz
dB
dBm
%
dBc
mA
mA
mA
dB
Notes:
1. Idq1 = 60 mA, Idq2 = 340 mA, Vd1 = Vd2 = +5.0 V.
2. Pin= -10 dBm.
3. Production Testing includes Gain, Output Power at 1-dB gain compression (P1dB) and Input
Return Loss at Vd1 = Vd2 = +5.0V; Vg1,Vg2 = -0.5V (nominal), adjust Vg1 and Vg2 to get Idq1 = 60 mA,
Idq2 = 340 mA and at F = 2.45 GHz.
4. Two tone 3rd order Output Intermodulation products (IM3) are measured with total output power
level of +25 dBm.
Other Parameters are guaranteed by Design Validation Testing (DVT).
Raytheon reserves the right to update or change specifications without notice.
Tel: 978-684-8663
Fax: 978-684-8646
www.raytheon.com/micro
Revised February 7, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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