SST31LF021 データシートの表示（PDF） - Silicon Storage Technology
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SST31LF021 Datasheet PDF : 24 Pages
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2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021 / SST31LF021E
EOL Data Sheet
TABLE 5: DC OPERATING CHARACTERISTICS (VDD = 3.0-3.6V)
Limits
Symbol Parameter
Min Max Units
IDD
Power Supply Current
ISB1
ILI
ILO
VIL
VIH
VIHC
VOL
VOH
VH
IH
Read
Flash
SRAM
Concurrent Operation
Write
Flash (Program)
SRAM
Standby VDD Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
Supervoltage for A9 pin
Supervoltage Current for A9 pin
12 mA
40 mA
55 mA
15 mA
40 mA
30 µA
1
µA
1
µA
0.4 V
0.7VDD
V
VDD-0.3
V
0.2 V
VDD-0.2
V
11.4 12.6 V
200 µA
Test Conditions
Address input VILT/VIHT, at f=1/TRC Min,
VDD=VDD Max, all DQs open
OE#=VIL, WE#=VIH
BEF#=VIL, BES#=VIH
BEF#=VIH, BES#=VIL
BEF#=VIH, BES#=VIL
OE#=VIH, WE#=VIL
BEF#=VIL, BES#=VIH
BEF#=VIH, BES#=VIL
BEF#=BES#=VIHC, VDD=VDD Max
VIN=GND to VDD, VDD=VDD Max
VOUT=GND to VDD, VDD=VDD Max
VDD=VDD Min
VDD=VDD Max
VDD=VDD Max
IOL=100 µA, VDD=VDD Min
IOH=-100 µA, VDD=VDD Min
BEF#=OE#=VIL, WE#=VIH
BEF#=OE#=VIL, WE#=VIH, A9=VH Max
1. Specification applies to commercial temperature devices only. This parameter may be higher for extended devices.
T5.4 1137
TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
TPU-READ1
TPU-WRITE1
Power-up to Read Operation
Power-up to Write Operation
100
µs
100
µs
T6.1 1137
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
I/O Pin Capacitance
VI/O = 0V
12 pF
CIN1
Input Capacitance
VIN = 0V
6 pF
T7.0 1137
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Minimum Specification Units Test Method
NEND1
Endurance
10,000
Cycles JEDEC Standard A117
TDR1
Data Retention
100
Years JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA JEDEC Standard 78
T8.1 1137
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2007 Silicon Storage Technology, Inc.
9
S71137-06-EOL
05/07
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