10XS4200 データシートの表示（PDF） - Freescale Semiconductor
部品番号
コンポーネント説明
一致するリスト
10XS4200 Datasheet PDF : 60 Pages
| |||
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Unless specified otherwise: 8.0 V ≤ VPWR ≤ 36 V, 3.0 V ≤ VDD ≤ 5.5 V, - 40 °C ≤ TA ≤ 125 °C, GND = 0 V. Typical values are
average values evaluated under nominal conditions TA = 25 °C, VPWR = 28 V & VDD = 5.0 V, unless specified otherwise.
parameter
Symbol
Min
Typ
Max
Unit
ELECTRICAL CHARACTERISTICS OF THE OUTPUT STAGE (HS0 AND HS1)
ON-Resistance, Drain-to-Source (IHS = 3.0 A, TJ = 25 °C)
CSNS_ratio = 0
VPWR = 8.0 V
VPWR = 28 V
VPWR = 36 V
RDS(ON)25_0
–
–
–
ON-Resistance, Drain-to-Source (IHS = 1.0 A, TJ = 25 °C)
CSNS_ratio = 1
VPWR = 8.0 V
VPWR = 28 V
VPWR = 36 V
RDS(ON)25_1
–
–
–
ON-Resistance, Drain-to-Source (IHS = 3.0 A,TJ = 150 °C)
CSNS_ratio = 0
VPWR = 8.0 V
VPWR = 28 V
VPWR = 36 V
RDS(ON)150_0
–
–
–
ON-Resistance, Drain-to-Source (IHS = 1.0 A,TJ = 150 °C)
CSNS_ratio = 1
VPWR = 8.0 V
VPWR = 28 V
VPWR = 36 V
RDS(ON)150_1
–
–
–
ON-Resistance, Drain-to-Source difference from one channel to the other ΔRDS(ON)150
in parallel mode (IHS = 1.0 A,TJ = 150 °C) CSNS_ratio = X
-0.8
ON-Resistance, Source-Drain (IHS = -3.0 A, TJ = 150 °C,
VPWR = -24 V)
RSD(ON)150
–
Max. detectable wiring length (2.5 mm²) for severe short-circuit detection
(see Power Supply):
LSHORT
High slew rate selected
20
Medium slew rate selected:
50
Low slew rate selected:
100
Over-current Detection thresholds with CSNS_ratio bit = 0 (CSR0)
OCH1_0
55
OCH2_0
35
OCM1_0
22
OCM2_0
13
OCL1_0
9.0
OCL2_0
6.0
OCL3_0
3.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
85
160
280
66
42
26
16
10.8
7.2
3.6
mΩ
10
10
10
mΩ
10
10
10
mΩ
18
18
18
mΩ
18
18
18
+0.8
mΩ
18
mΩ
cm
140
300
600
77
A
49
31
19.5
12.6
8.4
4.2
Analog Integrated Circuit Device Data
Freescale Semiconductor
10XS4200
9
Share Link: 