STW11NK90Z データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

一致するリスト

STW11NK90Z

N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STW11NK90Z

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=9.2A, VGS=0

ISD=9.2A,

di/dt = 100A/µs,

VDD=50V, Tj=25°C

(see Figure 18)

ISD=9.2A,

di/dt = 100A/µs,

VDD=50V, Tj=150°C

(see Figure 18)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

9.2 A

36.8 A

1.6 V

584

ns

6

µC

21

A

790

ns

8.7

µC

22

A

Table 8. Gate-source zener diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

BVGSO(1)

Gate-source breakdown

voltage

Igs=±1mA (open drain) 30

V

1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

5/12

Share Link: