STW11NK90Z データシートの表示（PDF） - STMicroelectronics

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STW11NK90Z

N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

STW11NK90Z

1

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VDGR

VGS

ID

ID

IDM(1)

PTOT

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20KΩ)

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

VESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5KΩ)

dv/dt(2) Peak diode recovery voltage slope

TJ

Operating junction temperature

Tstg

Storage temperature

1. Pulse width limited by safe operating area

2. ISD < 9.2A, di/dt < 200A/µs, VDD =80%V(BR)DSS

Table 2. Thermal resistance

Symbol

Parameter

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering purpose

Table 3. Avalanche data

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting Tj=25°C, Id=Iar, Vdd=50V)

Electrical ratings

Value

900

900

± 30

9.2

5.8

36.8

200

1.51

6000

4.5

-55 to 150

Unit

V

V

V

A

A

A

W

W/°C

V

V/ns

°C

Value

0.66

50

300

Unit

°C/W

°C/W

°C

Value

Unit

9.2

A

400

mJ

3/12

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