STW11NK90Z データシートの表示（PDF） - STMicroelectronics

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STW11NK90Z

N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STW11NK90Z

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

900

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

1

µA

50 µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±10 µA

VGS(th) Gate threshold voltage

VDS= VGS, ID = 100µA

3 3.75 4.5 V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 4.6A

0.82 0.98 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1) Forward transconductance VDS =15V, ID = 4.6A

11

S

Ciss Input capacitance

3000

pF

Coss

Crss

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

240

48

pF

pF

Coss

(2)

eq .

Equivalent output

capacitance

VGS=0, VDS =0V to 720V

83

pF

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=720V, ID = 9.2A

VGS =10V

(see Figure 14)

95 115 nC

14

nC

49

nC

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

inceases from 0 to 80% VDSS

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD=450 V, ID= 4.6A,

RG=4.7Ω, VGS=10V

(see Figure 13)

Min. Typ. Max. Unit

30

ns

19

ns

76

ns

50

ns

4/12

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