R6010ANX データシートの表示（PDF） - ROHM Semiconductor
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R6010ANX Datasheet PDF : 7 Pages
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R6010ANX
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
VDS=10V
pulsed
Ta=125°C
10
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
0.1
1
10
100
Drain Current : ID [A]
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
1.0
Ta=25°C
Pulsed
0.8
0.6
ID=10A
0.4
ID=5A
0.2
0.0
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.11 Dynamic Input Characteristics
10
Ta=25°C
VDD=300V
ID=10A
8 Pulsed
6
4
2
0
0
5
10
15
20
25
Total Gate Charge : Qg [nC]
Fig.8 Source Current vs. Source-Drain Voltage
100
VGS=0V
pulsed
10 Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
0.0
10000
0.5
1.0
1.5
Source-Drain Voltage : VSD [V]
Fig.10 Switching Characteristics
1000
tf
100
10
1
0.01
td(off)
td(on)
VDD≒300V
tr
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
0.1
1
10
100
Drain Current : ID [A]
Fig.12 Typical Capacitance vs. Drain-Source Voltage
100000
10000
Ta=25°C
f=1MHz
VGS=0V
1000
Coss
Ciss
100
Crss
10
1
0.01
0.1
1
10
100 1000
Drain-Source Voltage : VDS [V]
10000
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4/6
2011.10 - Rev.A
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