R6010ANX データシートの表示（PDF） - ROHM Semiconductor
部品番号
コンポーネント説明
一致するリスト
R6010ANX Datasheet PDF : 7 Pages
| |||
Data Sheet
10V Drive Nch MOSFET
R6010ANX
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5
2.8
(1) Gate
(2) Drain
(3) Source
1.2
1.3
0.8
2.54
2.54
0.75
2.6
(1) (2) (3)
Application
Switching
Packaging specifications
Package
Bulk
Type Code
-
Basic ordering unit (pieces) 500
R6010ANX
Inner circuit
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol Limits
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
30
V
Drain current
Continuous
ID *3
10
A
Pulsed
IDP *1
40
A
Source current
(Body Diode)
Continuous
IS *3
10
A
Pulsed
ISP *1
40
A
Avalanche current
IAS *2
5
A
Avalanche energy
EAS *2
6.5
mJ
Power dissipation
PD *4
50
W
Channel temperature
Tch
150
C
Range of storage temperature
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Starting, Tch=25C
*3 Limited only by maximum temperature allowed.
*4 TC=25C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.10 - Rev.A
Share Link: 