R6010ANX データシートの表示（PDF） - ROHM Semiconductor
部品番号
コンポーネント説明
一致するリスト
R6010ANX Datasheet PDF : 7 Pages
| |||
R6010ANX
Electrical characteristics (Ta = 25C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
-
Drain-source breakdown voltage V(BR)DSS 600
Zero gate voltage drain current
IDSS
-
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
2.5
RDS
*
(on)
-
Forward transfer admittance
l Yfs l* 3.0
Input capacitance
Ciss
-
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
-
Turn-on delay time
td(on) *
-
Rise time
tr *
-
Turn-off delay time
td(off) *
-
Fall time
tf *
-
Total gate charge
Qg *
-
Gate-source charge
Qgs *
-
Gate-drain charge
Qgd *
-
*Pulsed
Typ.
-
-
-
-
0.43
-
1050
720
35
25
30
70
30
25
5
12
Max.
100
-
100
4.5
0.56
-
-
-
-
-
-
-
-
-
-
-
Unit
Conditions
nA VGS=30V, VDS=0V
V ID=1mA, VGS=0V
A VDS=600V, VGS=0V
V VDS=10V, ID=1mA
ID=5A, VGS=10V
S ID=5A, VDS=10V
pF VDS=25V
pF VGS=0V
pF f=1MHz
ns VDD 300V, ID=5A
ns VGS=10V
ns RL=60
ns RG=10
nC VDD 300V, ID=10A
nC VGS=10V
nC
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol Min.
VSD *
-
*Pulsed
Typ.
-
Max. Unit
Conditions
1.5
V Is=10A, VGS=0V
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.10 - Rev.A
Share Link: 