DESCRIPTION
This device is a special tangential field difference sensor with two AMR (Anisotropic Magneto-Resistive) bridges for field movement measurements or field comparative measurements.
The ZMX40M contains two extremely sensitive magnetic sensor chips, mounted parallel to each other in an SM8 package, employing the magneto-resistive effect of thin film permalloy. It allows the measurement of magnetic fields or the detection of magnetic parts. The sensors each consist of a chip covered with thin film permalloy stripes which form a Wheatstone bridge, whose output voltage is proportional to the magnetic field component Hy. A field Hx, which is perpendicular to Hy, is necessary to suppress the hysteresis and to bias the sensors into the linear region. This field Hx is provided by an internal permanent magnet.

FEATURES
• Output voltage proportional to magnetic field Hy
   across each chip
• Both chips are in the same orientation and chip
   centres are 3mm apart in Y direction
• Magnetic fields vertical to the chip level Hz are not
   effective
• Disturbing fields Hx up to 30 kA/m are allowed
• Extremely small chip distance from the top side of
   package for accurate measurement
• Internal magnet each chip for creation of auxiliary
   field Hx

APPLICATIONS
• Linear position measurement for process control,
   door interlocks, proximity detectors and precision
   machine tools
• H-field movement measurement for a magnetic
   tape recognition
• High voltage isolated current measurement up to
   many amps range by using a suitable current loop
   over or under the IC
• Detection of rotating magnets in the presence of a
   disturbing field by comparisons of maximum
   values of individual sensors