YJG30P10A データシート - Yangzhou yangjie electronic co., Ltd
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YJG30P10A
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Yangzhou yangjie electronic co., Ltd
Product Summary
● VDS -100V
● ID -30A
● RDS(ON)( at VGS=-10V) ＜54mohm
● RDS(ON)( at VGS=-4.5V) ＜59mohm
● 100% UIS Tested
● 100% ▽VDS Tested
General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
APPLICATIONs
● High current load applications
● Load switching
● Hard switched and high frequency circuits
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