datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  Yangzhou yangjie electronic co., Ltd  >>> YJG30N06A PDF

YJG30N06A データシート - Yangzhou yangjie electronic co., Ltd

YJG30N06A image

部品番号
YJG30N06A

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
555 kB

メーカー
YANGJIE
Yangzhou yangjie electronic co., Ltd YANGJIE

Product Summary
● VDS 60 V
● ID 30 A
● RDS(ON)( at VGS=10V) <20 mohm
● RDS(ON)( at VGS=4.5V) <23 mohm
● 100% UIS Tested
● 100% ▽VDS Tested

General Description
● Trench Power MV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)


APPLICATIONs
● DC-DC Converters
● Power management functions
● Backlighting


部品番号
コンポーネント説明
PDF
メーカー
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
NXP Semiconductors.
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics

Share Link: GO URL

EnglishEnglish Korean한국어 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]