■ GENERAL DESCRIPTION
The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.

■ FEATURES
  Low On-State Resistance : Rds (on)= 0.05Ω @ Vgs = 4.5V
                                   : Rds (on)= 0.07Ω @ Vgs = 2.5V
                                   : Rds (on)= 0.15Ω @ Vgs = 1.5V
  Ultra High-Speed Switching
  Gate Protect Diode Built-in
  Driving Voltage : 1.5V
  N-Channel Power MOSFET
  DMOS Structure
  Small Package : SOT-89
  Environmentally Friendly : EU RoHS Compliant, Pb Free
 
■ APPLICATIONS
● Notebook PCs
● Cellular and portable phones
● On-board power supplies
● Li-ion battery systems