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W29C040P70BN データシート - Winbond

W29C040 image

部品番号
W29C040P70BN

コンポーネント説明

Other PDF
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page
24 Pages

File Size
344.5 kB

メーカー
Winbond
Winbond Winbond

GENERAL DESCRIPTION
The  W29C040 is a 4-megabit, 5-volt only CMOS page mode Flash Memory organized as 512K  ´8 bits. The device can be written (erased and programmed) in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell  architecture of the W29C040 results in fast write (erase/program) operations with extremely low current consumption (compared to other comparable 5-volt flash memory products.) The device can also be erased and programmed by using standard EPROM programmers.


FEATURES
·  Single 5-volt write (erase and program) operations
·  Fast page-write operations
  - 256 bytes per page
  - Page write (erase/program) cycle: 5 mS (typ.)
  - Effective byte-write (erase/program) cycle time: 19.5 mS
  - Optional software-protected data write
·  Fast chip-erase operation: 50 mS
·  Two 16 KB boot blocks with lockout
·  Page write (erase/program) cycles: 50K (typ.)
·  Read access time: 70/90/120 nS
·  Ten-year data retention
·  Software and hardware data protection
·  Low power consumption
  - Active current: 25 mA (typ.)
  - Standby current: 20 mA (typ.)
·Automaticwrite (erase/program) timing with internal VPP generation
·  End of write (erase/program) detection
- Toggle bit
- Data polling
·  Latched address and data
·  All inputs and outputs directly TTL compatible
·  JEDEC standard byte-wide pinouts
·  Available packages: 32-pin 600 mil DIP, TSOP and PLCC

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部品番号
コンポーネント説明
PDF
メーカー
512K ´8 CMOS FLASH MEMORY
Winbond
FLASH MEMORY CMOS 4M (512K ×8) BIT
Fujitsu
512K (64K x 8) CMOS FLASH MEMORY
Intel
FLASH MEMORY CMOS 4M (512K × 8) BIT
Spansion Inc.
4M (512K × 8) Flash Memory
Sharp Electronics
4M (512K × 8) Flash Memory
Sharp Electronics
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ON Semiconductor
512K-Bit CMOS Flash Memory
Catalyst Semiconductor => Onsemi
512K-Bit CMOS Flash Memory
ON Semiconductor
4M (512K × 8) Flash Memory
Sharp Electronics

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