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VSMY3850-GS08(2011_09) データシート - Vishay Semiconductors

VSMY3850 image

部品番号
VSMY3850-GS08

Other PDF
  2010   2011   lastest PDF  

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page
6 Pages

File Size
129.8 kB

メーカー
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
VSMY3850 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity, high optical power and high speed, molded in a PLCC-2 package for surface mounting (SMD).


FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: φ = ± 60°
• Suitable for high pulse current operation
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC

RELEASED FOR APPLICATIONS
Infrared radiation source for operation with CMOS cameras
(illumination)
• High speed IR data transmission
• IR touch panels
• 3D TV
• Light curtain


部品番号
コンポーネント説明
PDF
メーカー
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2010 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2010 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2013 )
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2016 )
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology ( Rev : 2011_03 )
Vishay Semiconductors

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