datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  Vishay Semiconductors  >>> VSMF9700-GS08 PDF

VSMF9700-GS08 データシート - Vishay Semiconductors

VSMF9700 image

部品番号
VSMF9700-GS08

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
134.3 kB

メーカー
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
VSMF9700X01 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 package.
VSMF9700X01 is dedicated to emitter operation and detector operation.


FEATURES
• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: λp = 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half sensitivity: ϕ = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• Floor life: 168 h, MSL 3, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC
• Find out more about Vishay’s Automotive Grade Product
   requirements at: www.vishay.com/applications


APPLICATIONS
• Automotive sensors
• Rain sensor
• Infrared high speed remote control and free air data
   transmission systems


部品番号
コンポーネント説明
PDF
メーカー
High Speed Infrared Emitting Diode, 890 nm ( Rev : 2015 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm ( Rev : 2014 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH ( Rev : 2013 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2015 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors

Share Link: GO URL

EnglishEnglish Korean한국어 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]