Description
The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention.

FEATUREs
■ 256K x 16-bit or 512K x 8-bit Organization
■ Address Access Time: 70, 90, 120 ns
■ Single 5V ± 10% Power Supply
■ Sector Erase Mode Operation
■ 16KB Boot Block (lockable)
■ 1K bytes per Sector, 512 Sectors
   – Sector-Erase Cycle Time: 10ms (Max)
   – Byte-Write Cycle Time: 20µs (Max)
■ Minimum 10,000 Erase-Program Cycles
■ Low power dissipation
   – Active Read Current: 19mA (Typ)
   – Active Program Current: 30mA (Typ)
   – Standby Current: 100µA (Max)
■ Hardware Data Protection
■ Low VCC Program Inhibit Below 3.5V
■ Self-timed write/erase operations with end-ofcycle detection
   – DATA Polling
   – Toggle Bit
■ CMOS and TTL Interface
■ Available in two versions
   – V29C51400T (Top Boot Block)
   – V29C51400B (Bottom Boot Block)
■ Packages:
   – 48-pin TSOP