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V10P12 データシート - Vishay Semiconductors

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部品番号
V10P12

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5 Pages

File Size
76 kB

メーカー
Vishay
Vishay Semiconductors Vishay

FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS
  For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications.

 

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部品番号
コンポーネント説明
PDF
メーカー
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier ( Rev : 2013 )
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Vishay Semiconductors

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