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Renesas Electronics
DESCRIPTION
The µPA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside.
This product is designed for synchronous DC/DC converter application.
FEATURES
• Built a Schottky Barrier Diode
• Low on-state resistance
RDS(on)1 = 11 mΩ TYP. (VGS = 10 V, ID = 5.5 A)
RDS(on)2 = 16 mΩ TYP. (VGS = 4.5 V, ID = 5.5 A)
RDS(on)3 = 19 mΩ TYP. (VGS = 4.0 V, ID = 5.5 A)
• Low Ciss: Ciss = 660 pF TYP.
• Small and surface mount package (Power SOP8)
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching ( Rev : 2010 )
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching ( Rev : 2010 )
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching ( Rev : 2010 )
Renesas Electronics
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
Renesas Electronics