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UPA1809GR-9JG データシート - Renesas Electronics

PA1809 image

部品番号
UPA1809GR-9JG

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Renesas
Renesas Electronics Renesas

DESCRIPTION
The µPA1809 is a switching device which can be driven directly by a 4.0 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC Converters and power management of notebook computers and so on.


FEATURES
• 4.0 V drive available
• Low on-state resistance
   RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 4.0 A)
   RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
   RDS(on)3 = 32 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD


部品番号
コンポーネント説明
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メーカー
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology

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