DESCRIPTION
TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 15°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS
• Infrared remote control and free air transmission systems with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors