DESCRIPTION
TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.

FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅5
• Peak wavelength: λp = 830 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: φ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz
• Good spectral matching with CMOS cameras
• Compliant to RoHS Directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC
​​​​​​​• Halogen-free according to IEC 61249-2-21 definition

APPLICATIONS
• Infrared radiation source for operation with CMOS
   cameras (illumination)
• High speed IR data transmission
• Smoke-automatic fire detectors