datasheetbank_Logo
データシート検索エンジンとフリーデータシート
HOME  >>>  Toshiba  >>> TPC8402 PDF

TPC8402 データシート - Toshiba

TPC8402 image

部品番号
TPC8402

Other PDF
  no available.

PDF
DOWNLOAD     

page
11 Pages

File Size
717.2 kB

メーカー
Toshiba
Toshiba Toshiba

Lithium Ion Secondary Battery Applications
Notebook PCs
Portable Equipment Applications

● Low drain−source ON resistance
   : P Channel RDS (ON) = 27 mΩ (typ.)
     N Channel RDS (ON) = 37 mΩ (typ.)
● High forward transfer admittance
   : P Channel |Yfs| = 7 S (typ.)
     N Channel |Yfs| = 6 S (typ.)
● Low leakage current
   : P Channel IDSS = −10 µA (VDS = −30 V)
     N Channel IDSS = 10 µA (VDS = 30 V)
● Enhancement−mode
   : P Channel Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1mA)
     N Channel Vth = 0.8~2.0 V (VDS = 10 V, ID = 1mA)


部品番号
コンポーネント説明
PDF
メーカー
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Toshiba

Share Link: GO URL

EnglishEnglish Korean한국어 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]