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TK32E12N1(2012) データシート - Toshiba

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部品番号
TK32E12N1

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9 Pages

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252.5 kB

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Toshiba
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Features
(1) Low drain-source on-resistance: RDS(ON) = 11.0 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)


APPLICATIONs
• Switching Voltage Regulators


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