DESCRIPTION
The device is a single 3.3 V 1-Gbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only
Memory (NAND E2PROM) organized as 528 bytes u32 pages u4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes u32 pages).
x Organization
Memory cell allay 528 u128K u8
Register 528 u8
Page size 528 bytes
Block size (16K 512) bytes
x Modes
Read, Reset, Auto Page Program,
Auto Block Erase, Status Read,
Multi Block Program, Multi Block Erase
x Mode control
Serial input/output
Command control
x Power supply VCC 2.7 V to 3.6 V
x Program/Erase Cycles 1E5 cycle (with ECC)
x Access time
Cell array to register 25 Ps max
Serial Read Cycle 50 ns min
x Operating current
Read (50 ns cycle) 10 mA typ.
Program (avg.) 10 mA typ.
Erase (avg.) 10 mA typ.
Standby 50 PA max.
x Package
TSOPI48-P-1220-0.50 (Weight: 0.53g typ.)