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TC2141 データシート - Transcom, Inc.

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部品番号
TC2141

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4 Pages

File Size
768.3 kB

メーカー
TRANSCOM
Transcom, Inc. TRANSCOM

DESCRIPTION
The TC2141 is a high performance field effect transistor housed in a leadless air cavity plastic package with TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.


FEATURES
● 0.5 dB Typical Noise Figure at 12 GHz
● High Associated Gain: Ga = 11.5 dB Typical at 12 GHz
● 18.5 dBm Typical Power at 12 GHz
● 12.5 dB Typical Linear Power Gain at 12 GHz
● Breakdown Voltage : BVDGO ≥ 9V
● Lg = 0.25 µm, Wg = 160 µm
● Tight Vp ranges control
● High RF input power handling capability
● 100 % DC Tested
● Leadless Air Cavity Plastic Package

Page Link's: 1  2  3  4 

部品番号
コンポーネント説明
PDF
メーカー
Low Noise and High Dynamic Range Packaged GaAs FETs ( Rev : 2007 )
Transcom, Inc.
Low Noise and High Dynamic Range Packaged GaAs FETs
Unspecified
Low Noise and High Dynamic Range Packaged GaAs FETs
Transcom, Inc.
Plastic Packaged Low Noise PHEMT GaAs FETs
Transcom, Inc.
Low Noise Ceramic Packaged PHEMT GaAs FETs
Transcom, Inc.
Low Noise Ceramic Packaged PHEMT GaAs FETs
Unspecified
Plastic Packaged Low Noise PHEMT GaAs FETs
Transcom, Inc.
Low Noise Ceramic Packaged PHEMT GaAs FETs ( Rev : 2002 )
Transcom, Inc.
High Dynamic Range Low Noise GaAs FET
Mimix Broadband
High Dynamic Range Low-Noise GaAs FET ( Rev : 2005 )
Mimix Broadband

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