DESCRIPTION
T8514VB is an infrared, 850 nm emitting diode in GaAlAs double hetero technology with high radiant power and high speed. Anode is the bond pad on top.

FEATURES
• Package type: chip
• Package form: single chip
• Technology: double hetero
• Dimensions chip (L x W x H in mm): 0.37 x 0.37
   x 0.17
• Peak wavelength: λ = 850 nm
• Compliant to RoHS directive 2002/95/EC and in
   accordance to WEEE 2002/96/EC