General Description
This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances.

FEATUREs

N-Channel MOSFET

BVDSS(Minimum)                      : 200 V

RDS(ON)(Maximum)                   : 0.18 ohm

ID                                          : 18A

Qg (Typical)                             : 40 nc

PD(@TC=25)                            : 139 W