GENERAL DESCRIPTION
SVF12N60T/F/FG/S/K  is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary  F-Cell™ structure  VDMOS technology. The improved planar stripe cell and the improved guard  ring terminal have been especially tailored to minimize on-state resistance,  provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

FEATURES
∗  12A,600V,RDS(on)(typ)=0.58Ω @ VGS=10V
∗  Low gate charge
∗  Low Crss
∗  Fast switching
∗  Improved dv/dt capability