STP21NM60ND(2013) データシート - STMicroelectronics
部品番号
STP21NM60ND
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22 Pages
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1.3 MB
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STMicroelectronics
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Intrinsic fast-recovery body diode
• Worldwide best RDS(on)*area amongst the fast
recovery diode devices
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
APPLICATIONs
• Switching applications
部品番号
コンポーネント説明
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N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages
STMicroelectronics
N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET TO-220FP, I2PAK, TO-220 and TO-247 ( Rev : 2011 )
STMicroelectronics
N-channel 500 V, 0.1 Ω typ., 22 A MDmesh™ II Power MOSFET in D²PAK, TO-220FP, TO-220, TO-247 packages
STMicroelectronics
N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK
STMicroelectronics
N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
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